Characterization of TiSi2 Process and Electrical Properties

The goal of this experimentation consists of the formation of TiSi2 and demonstration of its electrical properties. The successful formation of a TiSiproduct was be confirmed by scanning electron micrograph (SEM) images, Rutherford Backscatter Spectroscopy (RBS) data, and electrical characterization. Following an annealing heat treatment, the RBS data indicated the presence of a Si substrate, a film that compositionally appears to be TiSi2, and a surface layer of TiO2. The electrical testing indicates the presence of ohmic behavior, and the resistance is strongly dependant on the furnace annealing and rapid thermal processing (RTP) treatments

The Journal of Microelectronic Research 2005

https://scholarworks.rit.edu/meec_archive/1014/thumbnail.jp

Proceedings of Abstracts, School of Physics, Engineering and Computer Science Research Conference 2022

© 2022 The Author(s). This is an open-access work distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited. For further details please see https://creativecommons.org/licenses/by/4.0/. Plenary by Prof. Timothy Foat, ‘Indoor dispersion at Dstl and its recent application to COVID-19 transmission’ is © Crown copyright (2022), Dstl. This material is licensed under the terms of the Open Government Licence except where otherwise stated. To view this licence, visit http://www.nationalarchives.gov.uk/doc/open-government-licence/version/3 or write to the Information Policy Team, The National Archives, Kew, London TW9 4DU, or email: [email protected] present proceedings record the abstracts submitted and accepted for presentation at SPECS 2022, the second edition of the School of Physics, Engineering and Computer Science Research Conference that took place online, the 12th April 2022